Abstract
In this study, PZT thin films with different compositions were deposited by a chemical solution deposition on Si wafer with or without Electric-Field-Assisted Annealing (EFA-A) for the easy control of domain switching by Atomic Force Microscope (AFM) to develop the advanced memory. As a result, it was demonstrated that the EFA-A was very effective to enhance the electrical properties of the PZT thin films and the coercive field of the resulting PZT thin films increased with increasing amount of Ti concentration. Therefore, we tried to switch the domain structure of the PZT thin films with a Zr/Ti ratio of 30/70 annealed with EFA-A by AFM to exhibit the possibility of the direct domain writing in the CSD-derived PZT thin film for the advanced AFM memory.
