抄録
We have newly developed a rotating box type multi-facing target sputtering system for fabrication of superconducting tunnel junction devices with both a 1 nm-thick tunnel barrier. For realization of high performance X-ray detector of superconducting tunnel junction devices, a sputtering system has to satisfy conditions such as a low-temperature sputtering, a high plasma density, multi-target sputtering and a compact sputtering. This newly developed rotating box type multi-facing target sputtering system has these characteristics. We have fabricated SiO2 thin films for insulation layer of superconducting tunnel junction devices using this sputtering system, and clarified the low-temperature characteristics of this sputtering system.
