Formation of Nano Diamonds in Surface Layer of Materials during Short Pulse Ion Beam Implantation

抄録

  The research results of the cubic carbon nanosized particle synthesis during short pulse ion beam implantation to silicon target are presented. The experiments are carried out using the high power ion beam accelerator “TEMP”. The beam parameters are as follows: the ion energy is 250-300 keV, the pulse duration is 80 ns, the elemental composition of beam is carbon ions and protons, and the ion current density is 20-25 A/cm². The formation of SiC nanosized particles and nanodiamonds in the surface layer of silicon is found out under sequential action of more than 100-500 pulses.