抄録
We have observed secondary electron microscope (SEM) images of the surfaces of Si with native oxide layers and highly oriented pyrolytic graphite (HOPG) irradiated with highly charged ions (HCIs, Ar11+) produced by an electron beam ion source at the fluence in the order of 1013～1014 /cm2. The contrast of SEM image changes brighter at irradiated areas for graphite surfaces, while the contrast for the Si surface become darken at irradiated areas. The SEM contrast between irradiated and unirradiated areas is understood in terms of the voltage contrast mechanism in the interpretation of SEM images. When the strength of the contrasts is roughly compared with the sample irradiated with singly charged ions (SCIs), HCI has 100 times higher efficiency for the production of SEM contrast than SCI. The high efficiency reflects the nature of interaction between HCI and surface.
