2011 年 36 巻 1 号 p. 119-121
Thermal evolution of Co precipitates in sapphire implanted with 5∙1017 Co+ ions/cm2 at 120 keV is studied. XRD measurements show that Co precipitates formed directly after implantation have average size of about 10 nm and grow in size to about 30 nm after annealing at 800 -1200℃ by means of monotonous Ostwald ripening process. In the final state they assume cubic form aligned with the sapphire lattice.