抄録
We have investigated dual-frequency sputtering plasma for higher deposition rates of aluminum nitride thin films. Main plasma was produced by inductively coupled discharge where an internal antenna with 100 mm in diameter was input by RF power of 13.56 MHz. The aluminum sputtering target was biased by not magnetron discharge voltage but a self–biased voltage of 1 MHz because of the uniform erosion of the target. Influence of external parameters such as target voltage Vt, target-antenna distance d and gas pressure p on the deposition rate of aluminum thin films was examined. The antenna-substrate distance was fixed at 20 mm. The highest deposition rate of aluminum thin film with 21 nm/min was obtained at Vt = -800 V, d = 50 mm and p = 70mTorr in the proposed dual frequency sputtering plasma source.
