2011 年 36 巻 2 号 p. 253-255
Recentry, from a point of environmental problems, oxygen gas sensors attract attention of controlling the exhaust gas. The Ga2O3 has an oxygen detection characteristic at temperatures more than 900℃, so this material atracts much attention as an oxygen sensor at high temperature. The β-Ga2O3 films were prepared by the RF magnetron sputtering method. The effects of Ar:O2 flow ratio, RF power, and thickness of films on the crystal and oxygen sensing properties were investigated. As a result, the superior crystal properties were obtained at the Ar:O2 flow ratio of 5:1. It was found that the oxygen sensitivity depended on the film thickness.
