抄録
Increasing the uniaxial-magnetic anisotropy in thin-film materials is a key issue for micro-magnetic devices driven at a GHz frequency. An especially high uniaxial-magnetic anisotropy is known to have been induced by only the carousel sputtering technique. We analyzed the atomic deposition process of Ru nano underlayer by using Monte Carlo simulation with respect to sputtered particles. The results indicated that the nano-interface of the Ru underlayer had brought the further reduction in surface energy. It was found that the nano-interface of the underlayer remarkably contributed to the higher uniaxial-magnetic anisotropy of the films.
