Structural and Electrical Properties of BaCe_0.90Y_0.10O_3-δ Thin Film on Al₂O₃ Substrate

抄録

The Y-doped BaCeO₃ (BaCe_0.90Y_0.10O_3-δ) thin films have prepared on Al₂O₃(0001) substrates by RF magnetron sputtering. The thin films prepared at the substrate temperature of 300～500°C exhibits (002), (022) and (400) orientations. The thin film consists of grain with a diameter of 60～150 nm and smooth surface, although the grain size depends on substrate temperature. The prepared thin films were transparent. The electrical conductivity of the thin film exhibits thermal activation type behavior in H₂O atmosphere of temperature region from 700 to 300°C. The activation energy (E_A) of the thin film estimated from the Arrhenius plot is 0.30～0.42 eV. The E_A values of the thin films are lower than that of the bulk ceramics.