抄録
Nd-doped BiFeO3 (BNF) thin film of 170 nm thickness was deposited on SrRuO3-coated (100) Nb-doped SrTiO3 substrate by pulsed laser deposition. Resistive switching and ferroelectric properties of BNF film capacitor were investigated by using Positive-Up-Negative-Down measurement. Switched charge without influence of the leakage current was 121 μC/cm2 with a maximum applied voltage of 9 V. The leakage current was estimated from the gradient of the pulse response when reading pulse was applied. After writing by voltages of -9 V and +9 V the current density at reading voltage of -1.8 V were 1.2 mA/cm2 and 14 μA/cm2, respectively. Maximum ON/OFF ratio of the leakage current was 86.
