抄録
A 6H-SiC substrate with femtosecond-laser-induced periodic nanostructures was used as an underlayer for GaN growth. GaN nuclei were formed on the periodic nanostructure selectively. The in-plane direction of GaN was dependent on the in-plane direction of the SiC substrate, and no dependent on the direction of the periodic nanostructures or laser scanning. We suggest that the fine structure and high wettability at the region of the periodic nanostructure enhanced the adsorption of GaN nuclei preferentially. This technique will enable selective growth without masks or solution exposure.
