Preparation of metal doped SiO₂ films by magnetron sputtering deposition using metal oxide mixture powder target

抄録

  Metal doped SiO₂ thin films, which show strong luminescence by UV excitation, were prepared by a sputtering deposition method using metal oxide and SiO₂ powder mixed targets. Electron density and temperature of the plasma using powder target was almost same independent for the mixture of powder target. However, peak intensity ratio of the plasma depends on the intensity of the powder target mixture. XPS measurements suggest that metal doped SiO₂ thin films can be prepared using metal oxide and SiO₂ mixture powder target, and their concentration ratio also depend on the powder target mixture.