Conductivity Modulation by CaVO₃-based All-solid-state Redox Transistor with Ion Transport of Li⁺ or H⁺

抄録

CaVO₃ (CVO)-based all-solid-state redox transistor with a Yttria-stabilized-ZrO₂ (YSZ) H⁺ ion conductor was fabricated. The electronic conductivity of the CVO was modulated by controlling oxygen nonstoichiometry due to H⁺ insertion and desertion (redox reaction). The variation in drain current was larger than that of SrVO₃ (SVO)-based all-solid-state redox transistor. For comparison, the CVO-based device with a Li₂O-ZrO₂-SiO₂ (LZSO) Li⁺ conductor was also investigated. The LZSO device also showed larger drain current enhancement than the SVO device. Controlling oxygen nonstoichiometry due to the redox reaction (H⁺ or Li⁺ insertion and desertion) is found to be effective for modulating electronic conductivity of CVO.