IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Special Section on Low-Power and High-Speed Chips
A Fully-Synthesizable 10.06Gbps 16.1mW Injection-Locked CDR in 28nm FDSOI
Aravind THARAYIL NARAYANANWei DENGDongsheng YANGRui WUKenichi OKADAAkira MATSUZAWA
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2017 年 E100.C 巻 3 号 p. 259-267

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An all-digital fully-synthesizable PVT-tolerant clock data recovery (CDR) architecture for wireline chip-to-chip interconnects is presented. The proposed architecture enables the co-synthesis of the CDR with the digital core. By eliminating the resource hungry manual layout and interfacing steps, which are necessary for conventional CDR topologies, the design process and the time-to-market can be drastically improved. Besides, the proposed CDR architecture enables the re-usability of majority of the sub-systems which enables easy migration to different process nodes. The proposed CDR is also equipped with a self-calibration scheme for ensuring tolerence over PVT. The proposed fully-syntehsizable CDR was implemented in 28nm FDSOI. The system achieves a maximum data rate of 10.06Gbps while consuming a power of 16.1mW from a 1V power supply.

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© 2017 The Institute of Electronics, Information and Communication Engineers
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