Room-Temperature Atomic Layer Deposition of SnO₂ Using Tetramethyltin and Its Application to TFT Fabrication

抄録

We report room-temperature atomic layer deposition (ALD) of SnO₂ using tetramethyltin (TMT) as a precursor and plasma-excited humidified argon as an oxidizing gas and investigate the saturation behaviors of these gases on SnO₂-covered Si prisms by IR absorption spectroscopy to determine optimal precursor/oxidizer injection conditions. TMT is demonstrated to adsorb on the SnO₂ surface by reacting with surface OH groups, which are regenerated by oxidizing the TMT-saturated surface by plasma-excited humidified argon. We provide a detailed discussion of the growth mechanism. We also report the RT ALD application to the RT TFT fabrication.