Digital/Analog-Operation of Hf-Based FeNOS Nonvolatile Memory Utilizing Ferroelectric Nondoped HfO₂ Blocking Layer

抄録

In this research, we investigated the digital/analog-operation utilizing ferroelectric nondoped HfO₂ (FeND-HfO₂) as a blocking layer (BL) in the Hf-based metal/oxide/nitride/oxide/Si (MONOS) nonvolatile memory (NVM), so called FeNOS NVM. The Al/HfN_0.5/HfN_1.1/HfO₂/p-Si(100) FeNOS diodes realized small equivalent oxide thickness (EOT) of 4.5nm with the density of interface states (D_it) of 5.3×10¹⁰eV^-1cm^-2 which were suitable for high-speed and low-voltage operation. The flat-band voltage (V_FB) was well controlled as 80-100mV with the input pulses of ±3V/100ms controlled by the partial polarization of FeND-HfO₂ BL at each 2-bit state operated by the charge injection with the input pulses of +8V/1-100ms.