Low-Temperature Grown GaAsSb with Sub-Picosecond Photocarrier Lifetime for Continuous-Wave Terahertz Measurements

抄録

We report on continuous-wave optoelectronic terahertz (THz) measurements using low-temperature grown (LTG) GaAsSb as photomixer material. A broadband log-periodic antenna and a six interdigital finger photomixer with 1μm gap is fabricated on LTG-GaAsSb for THz generation and detection. At 0.37THz, the resonance frequency of the inner most antenna tooth, we obtained a power of 6.3nW. A Golay cell was used as detector. The photocarrier lifetime of the material was determined to be 700fs by pump-probe experiments with an optical wavelength close to the band gap of LTG-GaAsSb. The band gap was 1.0eV, measured by wavelength dependent pump-probe measurements.