Interface State Density between Direct Nitridation Layer and SiC Estimated from Current Voltage Characteristics of MIS Schottky Diode

Kiichi KAMIMURA; Hiroaki SHIOZAWA; Tomohiko YAMAKAMI; Rinpei HAYASHIBE

doi:10.1587/transele.E92.C.1470

Special Section on Nanomaterials and Nanodevices for Nanoscience and Nanotechnology

Interface State Density between Direct Nitridation Layer and SiC Estimated from Current Voltage Characteristics of MIS Schottky Diode

Kiichi KAMIMURA, Hiroaki SHIOZAWA, Tomohiko YAMAKAMI, Rinpei HAYASHIBE

著者情報

キーワード: SiC, nitride, interface, MIS Schottky

ジャーナル認証あり

2009 年 E92.C 巻 12 号 p. 1470-1474

DOI https://doi.org/10.1587/transele.E92.C.1470

詳細

抄録

Interface state density was estimated from diode factor n of SiC MIS Schottky diode. The interface state density was the order of 10¹²cm^-2eV^-1, and was same order to the value for the sample carefully prepared by oxidation and post oxidation annealing. The interface state density determined from n was consistent to the value calculated from the capacitance voltage curve of SiO₂/nitride/SiC MIS diode by Terman method. High temperature nitridation was effective to reduce the interface state density.

責任著者(Corresponding author)