IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Regular Section
A 4-Gbps Quasi-Millimeter-Wave Transmitter in 65nm CMOS and a Fast Carrier and Symbol Timing Recovery Scheme
Vishal V. KULKARNIHiroki ISHIKUROTadahiro KURODA
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2010 年 E93.C 巻 1 号 p. 120-127

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A CMOS wireless transceiver operating in the 14-18GHz range is proposed. The receiver uses direct conversion architecture for demodulation with a fast carrier and symbol timing recovery scheme. The transmitter uses a PLL and an up-conversion mixer to generate BPSK modulated signal. A ring oscillator is used in the PLL to make faster switching for burst transmission obtaining high speed low power operation. The transceiver operation has been verified by system simulation while the transmitter test-chip was fabricated in 65nm CMOS technology and verified with measured results. The transmitter generates a bi-phase modulated signal with a center frequency of 16GHz at a maximum data rate of 4Gb/s and consumes 61mW of power. To the best knowledge of authors, this is lowest power consumption among the reported transmitters that operate over 1Gb/s range. The transceiver is proposed for a target communication distance of 10cm.

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© 2010 The Institute of Electronics, Information and Communication Engineers
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