Enhancement of the Programming Speed in SANOS Nonvolatile Memory Device Designed Utilizing Al2O3 and SiO2 Stacked Tunneling Layers

Hyun Woo KIM; Dong Hun KIM; Joo Hyung YOU; Tae Whan KIM

doi:10.1587/transele.E93.C.651

Special Section on Fundamentals and Applications of Advanced Semiconductor Devices

Enhancement of the Programming Speed in SANOS Nonvolatile Memory Device Designed Utilizing Al₂O₃ and SiO₂ Stacked Tunneling Layers

Hyun Woo KIM, Dong Hun KIM, Joo Hyung YOU, Tae Whan KIM

著者情報

キーワード: SANOS, SONOS, charge transport, silicon nitride, stacked tunneling layer

ジャーナル認証あり

2010 年 E93.C 巻 5 号 p. 651-653

DOI https://doi.org/10.1587/transele.E93.C.651

詳細

抄録

The programming characteristics of polysilicon-aluminum oxide-nitride-oxide-silicon (SANOS) nonvolatile memory devices with Al₂O₃ and SiO₂ stacked tunneling layers were investigated. The electron and hole drifts in the Si₃N₄ layer were calculated to determine the program speed of the proposed SANOS devices. Simulation results showed that enhancement of the programming speed in SANOS was achieved by utilizing SiO₂ and Al₂O₃ stacked tunneling layers.

責任著者(Corresponding author)

J-STAGEへの登録はこちら（無料）