A 0.13µm CMOS Bluetooth EDR Transceiver with High Sensitivity over Wide Temperature Range and Immunity to Process Variation

抄録

A 2.4GHz 0.13µm CMOS transceiver LSI, supporting Bluetooth V2.1 + enhanced data rate (EDR) standard, has achieved a high reception sensitivity and high-quality transmission signals between −40°C and +90°C. A low-IF receiver and direct-conversion transmitter architecture are employed. A temperature compensated receiver chain including a low-noise amplifier accomplishes a sensitivity of −90dBm at frequency shift keying modulation even in the worst environmental condition. Design optimization of phase noise in a local oscillator and linearity of a power amplifier improves transmission signals and enables them to meet Bluetooth radio specifications. Fabrication in scaled 0.13µm CMOS and operation at a low supply voltage of 1.5V result in small area and low power consumption.