On the Large Signal Evaluation and Modeling of GaN FET

Iltcho ANGELOV; Mattias THORSELL; Kristoffer ANDERSSON; Akira INOUE; Koji YAMANAKA; Hifumi NOTO

doi:10.1587/transele.E93.C.1225

Special Section on Heterostructure Microelectronics with TWHM 2009

On the Large Signal Evaluation and Modeling of GaN FET

Iltcho ANGELOV, Mattias THORSELL, Kristoffer ANDERSSON, Akira INOUE, Koji YAMANAKA, Hifumi NOTO

著者情報

キーワード: GaN, FET, small signal and large signal models

ジャーナル認証あり

2010 年 E93.C 巻 8 号 p. 1225-1233

DOI https://doi.org/10.1587/transele.E93.C.1225

詳細

抄録

The large signal performance and model for GaN FET devices was evaluated with DC, S-parameters, and large signal measurements. The large signal model was extended with bias and temperature dependence of access resistances, modified capacitance and charge equations, as well as breakdown models. The model was implemented in a commercial CAD tool and exhibits good overall accuracy.

責任著者(Corresponding author)

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