抄録
By using electric field induced second harmonic generation (EFISHG) and Capacitance-Voltage (C-V) measurements, we studied carrier behaviors in ITO/polyimide (PI)/poly (3-hexylthiophene)(P3HT)/Au diodes. Photoillumination caused the threshold voltage shift in the C-V, and agreed well with the shift probed by the EFISHG. Results suggested trapped electrons were accumulated in the PI layer.