Effects of Field Plate and Buried Gate Structures on Silicon Carbide Metal-Semiconductor Field-Effect Transistors

Jae-Gil LEE; Chun-Hyung CHO; Ho-Young CHA

doi:10.1587/transele.E94.C.842

Special Section on Fundamentals and Applications of Advanced Semiconductor Devices

Effects of Field Plate and Buried Gate Structures on Silicon Carbide Metal-Semiconductor Field-Effect Transistors

Jae-Gil LEE, Chun-Hyung CHO, Ho-Young CHA

著者情報

キーワード: buried gate, field plate, MESFET, silicon carbide

ジャーナル認証あり

2011 年 E94.C 巻 5 号 p. 842-845

DOI https://doi.org/10.1587/transele.E94.C.842

詳細

抄録

We investigated the effects of various field plate and buried gate structures on the DC and small signal characteristics of 4H-silicon carbide (SiC) metal-semiconductor field-effect transistors (MESFETs). In comparison with the source-connected field plate, the gate-connected field plate exhibited superior frequency response while having similar DC characteristics. In order to further enhance the output power, dual field plates were employed in conjunction with a buried gate structure.

責任著者(Corresponding author)

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