IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Special Section on Solid-State Circuit Design—Architecture, Circuit, Device and Design Methodology
A Radiation-Hard Redundant Flip-Flop to Suppress Multiple Cell Upset by Utilizing the Parasitic Bipolar Effect
Kuiyuan ZHANGJun FURUTARyosuke YAMAMOTOKazutoshi KOBAYASHIHidetoshi ONODERA
著者情報
キーワード: DMR, soft error, MCU, device simulation
ジャーナル 認証あり

2013 年 E96.C 巻 4 号 p. 511-517

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抄録
According to the process scaling, radiation-hard devices are becoming sensitive to soft errors caused by Multiple Cell Upset (MCUs). In this paper, the parasitic bipolar effects are utilized to suppress MCUs of the radiation-hard dual-modular flip-flops. Device simulations reveal that a simultaneous flip of redundant latches is suppressed by storing opposite values instead of storing the same value due to its asymmetrical structure. The state of latches becomes a specific value after a particle hit due to the bipolar effects. Spallation neutron irradiation proves that MCUs are effectively suppressed in the D-FF arrays in which adjacent two latches in different FFs store opposite values. The redundant latch structure storing the opposite values is robust to the simultaneous flip.
著者関連情報
© 2013 The Institute of Electronics, Information and Communication Engineers
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