抄録
We have improved a compact model for the injection-enhancedinsulated-gate bipolar transistor for inverter circuit simulation. The holeaccumulation of floating-base region and potential change are modeled. It turned out that negative capacitance which occurs by floating-base region has the dependence of frequency. It is necessary to consider the frequency dependence of the total gate capacitance for transient simulation. We analyzed the relationship between negative gate capacitance and current rise rate at the switch turn-on timing and device structure. The development model simulation result is well reproduced Ic and Vce of measurement data, and the switching loss calculation accuracy is improved.
