Fabrication of MgO:LiNbO3 Domain Inverted Structures with Short Period and Application to Electro-Optic Bragg Deflection Modulator

Toshiyuki INOUE; Toshiaki SUHARA

doi:10.1587/transele.E97.C.744

Special Section on Opto-electronics and Communications for Future Optical Network

Fabrication of MgO:LiNbO₃ Domain Inverted Structures with Short Period and Application to Electro-Optic Bragg Deflection Modulator

Toshiyuki INOUE, Toshiaki SUHARA

著者情報

キーワード: Bragg deflector, electro-optic (EO) modulator, MgO-doped LiNbO₃, ferroelectric crystal, domain inversion

ジャーナル認証あり

2014 年 E97.C 巻 7 号 p. 744-748

DOI https://doi.org/10.1587/transele.E97.C.744

詳細

抄録

We fabricated high-quality domain-inverted MgO: LiNbO₃ structures with 3.0 and 2.0 μm periods using applying votage to the corrugation electrode. We found that keeping the crystal temperature at 150^°C for 12 hours before applying voltage was effective for obtaining good uniformity. We also demonstrated an application of the structures with 3.0 μm period to electro-optic Bragg deflection modulator for the first time.

責任著者(Corresponding author)

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