One Transistor Type OFET/ReRAM Integrated Device utilizing High-k LaB_xN_y/Nitrogen-Doped LaB₆ Gate Electrode Stacked Structure

抄録

In this paper, we have investigated the integration process at room temperature and device characteristics of 1 transistor type nonvolatile memory with organic semiconductor field-effect transistor (OFET) integrated with resistive random access memory (ReRAM). The threshold voltage (V_TH) of pentacene-based OFET with LaB_xN_y gate insulator is controlled by the ReRAM characteristics of LaB_xN_y gate insulator. The bottom-gate type pentacene-based OFET was fabricated on SiO₂/Si(100) substrate. The nitrogen-doped LaB₆ bottom gate electrode was deposited by RF sputtering and patterned. Then, LaB_xN_y gate insulator was deposited by the RF sputtering followed by the pentacene and Au source and drain electrode deposition by the evaporation. The Set/Reset operations of ReRAM were confirmed by the drain voltage sweep of ± 2 V. Furthermore, V_TH shift of -0.9 V was observed by the Set operation of ReRAM so that the nonvolatile memory characteristics were realized for the 1 transistor type ReRAM/OFET.