論文ID: 19-00023
We developed a semiconductor strain sensor chip for measuring the biaxial strain with high sensitivity and low power consumption. This sensor chip has two bridge circuits (sensors) that consist of an impurity diffusion layer on a silicon substrate, and are arranged perpendicularly to each other. High sensitivity gauges and low sensitivity gauges in the chip are n-type and p-type diffusion layers, respectively. We performed a tensile test with a test piece, to which the developed strain sensor and a strain gauge were attached. We measured the strain sensitivities for each axis of the sensor. The strain sensitivities of the longitudinal and vertical directions were -12.4 and 4.9, respectively. The developed strain sensor was applied to the measurement of biaxial strain in the biaxial strain field and compared with the theoretical value and strain gauge measurement. We confirmed that the measured strain value of the developed strain sensor coincides with the theoretical value within 10% and it coincides with the measured value of the strain gauge within 8%.