Interactive Strength between C₆₀ Thin Film and Si(001) and Its Influence on Nano-Scaled Tribology

抄録

The influences of interactions between C₆₀ thin films and Si substrates were investigated using atomic force microscopy (AFM). It was found that higher friction coefficient was obtained at the C₆₀ domains formed on the H-terminated Si(001) substrate and lower ones on the Si(001)-2×1 substrate. Moreover, lowest friction coefficient was found for the C₆₀ film on the Si(001)-2×1 remained after scratching. Therefore, it is thought that higher interactions between C₆₀ and Si substrate caused lower friction coefficient of C₆₀ thin film. The prepared substrate was examined by reflection high energy electron diffraction (RHEED), X-ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy (AES).