テレビジョン学会技術報告
Online ISSN : 2433-0914
Print ISSN : 0386-4227
Effects of the Interface States and Fixed Charges on the Electrical Characteristics of Thin Film Transistors with Thin Amorphous Silicon Films
戴亞翔蘇峰正馮明憲鄭晃忠
著者情報
研究報告書・技術報告書 フリー

1994 年 18 巻 62 号 p. 73-78

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抄録
Considering the thin film transistors (TFT's) in the present applications In active matrix liquid crystal displays (AMILCD), the effects of the interface states and the fixed charges at both the rear and front interfaces, i.e., the semiconductor surface apart from and on the gate insulator, respectively, for the thin hydrogenated amorphous silicon (α-Si:H) films have been studied. It is found that the rear interface fixed charges and states will predominantly influence the electrical characteristics of the TFT's as much as the front interface ones do if the semiconductor films are thin enough.
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© 1994 The Institute of Image Information and Television Engineers
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