2017年真空・表面科学合同講演会特集号 [III]
絶縁膜/半導体界面制御と電気的特性
2018 年 61 巻 6 号 p. 384-389
詳細
2018 年 61 巻 6 号 p. 384-389
Control of an insulator and Ge, InGaAs, or GaN interface for metal-oxide-semiconductor field-effect transistors (MOSFETs) to overcome the limit of the Si material properties and the electrical properties have been discussed. An importance of a suitable interface control for each material properties was maintained for deriving the material properties in the MOSFETs. The author hope that the suitable interface control based on the well-understood interface structure and material properties leads to a robust fabrication process.
