Vacuum and Surface Science
Online ISSN : 2433-5843
Print ISSN : 2433-5835
Special Feature : Growth and In-situ Characterization of Two Dimensional Layered Materials
Growth of Two-dimensional Materials and Their In-plane Heterostructures by Thermal Chemical Vapor Deposition
Yasumitsu MIYATA
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2019 Volume 62 Issue 10 Pages 593-598


Conventional semiconductor heterojunctions with two-dimensional (2D) interfaces have been an important topic, both in solid state physics and in electronics and optoelectronics applications. Recently, the in-plane heterostructures based on 2D materials are expected to provide a novel one-dimensional (1D) interface with unique physical properties and applications. Even though there have been many reports on the growth studies of such heterostructures, it is still an important challenge to develop a sophisticated growth process of novel heterostructures/superlattices and high-quality samples without interface degradation, contamination and/or alloying. In this article, the author introduces our recent progresses of thermal chemical vapor deposition (CVD) growth of 2D materials including graphene, hexagonal boron nitride, and transition metal dichalcogenide (TMDC), and their heterostructures.

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この記事はクリエイティブ・コモンズ [表示 - 非営利 4.0 国際]ライセンスの下に提供されています。
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