表面と真空
Online ISSN : 2433-5843
Print ISSN : 2433-5835
特集「二次元層状物質の成長とその場評価―真空・表面技術による高品質薄膜の実現を目指して―」
熱化学気相成長法による二次元物質および面内ヘテロ構造の成長
宮田 耕充
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ジャーナル 認証あり

2019 年 62 巻 10 号 p. 593-598

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Conventional semiconductor heterojunctions with two-dimensional (2D) interfaces have been an important topic, both in solid state physics and in electronics and optoelectronics applications. Recently, the in-plane heterostructures based on 2D materials are expected to provide a novel one-dimensional (1D) interface with unique physical properties and applications. Even though there have been many reports on the growth studies of such heterostructures, it is still an important challenge to develop a sophisticated growth process of novel heterostructures/superlattices and high-quality samples without interface degradation, contamination and/or alloying. In this article, the author introduces our recent progresses of thermal chemical vapor deposition (CVD) growth of 2D materials including graphene, hexagonal boron nitride, and transition metal dichalcogenide (TMDC), and their heterostructures.

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この記事はクリエイティブ・コモンズ [表示 - 非営利 4.0 国際]ライセンスの下に提供されています。
https://creativecommons.org/licenses/by-nc/4.0/deed.ja
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