2019 年 62 巻 10 号 p. 593-598
Conventional semiconductor heterojunctions with two-dimensional (2D) interfaces have been an important topic, both in solid state physics and in electronics and optoelectronics applications. Recently, the in-plane heterostructures based on 2D materials are expected to provide a novel one-dimensional (1D) interface with unique physical properties and applications. Even though there have been many reports on the growth studies of such heterostructures, it is still an important challenge to develop a sophisticated growth process of novel heterostructures/superlattices and high-quality samples without interface degradation, contamination and/or alloying. In this article, the author introduces our recent progresses of thermal chemical vapor deposition (CVD) growth of 2D materials including graphene, hexagonal boron nitride, and transition metal dichalcogenide (TMDC), and their heterostructures.
