2020 Volume 63 Issue 7 Pages 348-351
Oxide semiconductors of elements such as Cu, Ti or Zn are promising for photovoltaic applications. Metal oxides has been fabricated via various wet or dry processes as low cost, non-toxic and chemically stable materials. It had been already found that the photovoltaic powers of Cu2O/TiO2 thin films by reactive magnetron sputtering were affected by the oxygen flow rate during the Cu2O thin film preparation in our investigations.
In this paper, the relationship between the photovoltaic power and the film crystal structure was investigated as a function of the Cu sputtering power or the Cu2O film thickness. The maximum photovoltaic power was obtained at 30 W in the Cu sputtering power. The photovoltaic power and the Cu2O film thickness had no correlation, while the photovoltaic power and the film structure had strong correlation with the peak of Cu2O(111). As a result, the photovoltaic power of Cu2O/TiO2 thin films was affected by the crystallinity of Cu2O.
