原子拡散接合法：無機薄膜（金属，酸化物，窒化物）を用いたガラス等の室温接合技術

抄録

Room-temperature wafer bonding can realize new electronic devices, power devices, optical devices, and microelectromechanical systems. Atomic diffusion bonding (ADB) of wafers is a promising process to achieve room-temperature wafer bonding : thin metal films are fabricated on two flat wafer surfaces using sputter deposition, followed by bonding of the two films on the wafers in vacuum. Any mirror-polished wafer including glass can be bonded using ADB. Recently we demonstrated ADB of wafers at room temperature using oxide films and nitride films. Incident light can pass through transparent wafers bonded with oxide films without reduction in intensity. Moreover, the electrical conductivity of the bonded oxide films and nitride films is negligible. These properties are useful to produce new optical or electrical devices. This paper assesses the technical potential and current status of ADB.