Analysis of Defect Propagation in SiC Crystals Formed by Solution Growth and Sublimation Growth and High Quality SiC Crystal Growth by the Hybrid Method Combining both Growth Techniques

Abstract

We have investigated the propagation of threading screw dislocations (TSD) in the hybrid growth that combines solution growth and sublimation growth. The higher TSD conversion ratio in solution growth is attributed not only to the macrostep height but also to the lateral flow speed of macrosteps which increases the interaction between TSDs and macrosteps. In sublimation growth in the hybrid process, the basal plane defect can be eliminated efficiently by 15° off growth. The energetic stability and activation barrier in the conversion between TSD and basal plane defect have been discussed.