The transition behavior from active to passive oxidation and from passive oxidation to bubble formation for CVD SiC was studied by thermogravimetry at wide-ranged oxygen partial pressures in O
2-Ar, CO
2-Ar and CO-CO
2 atmospheres at temperatures from 1600 to 2000 K. In O
2-Ar, the mass loss rate (i.e., active oxidation rate) increased with increasing
PO2, and at a critical
PO2 the active-to-passive transition (i.e., mass loss to mass gain) was clearly observed. In CO-CO
2, the mass loss was significant at a low
PCO2/
PCO ratio and then the mass loss decreased with increasing
PCO2/
PCO ratio. The transition from mass loss to mass gain was gradual, being contrast to that in O
2-Ar. The transition mechanism in O
2-Ar and CO-CO
2 was explained by Wagner model, volatility diagram and numerical thermodynamic calculation.
The transition from passive oxidation to bubble formation was observed at more than 1985K in O
2-Ar at
PO2>5kPa. At
PO2<5kPa the transition temperature decreased with decreasing
PO2 in O
2-Ar and CO
2-Ar. The bubble formation might be initiated by the stoichiometric reaction between SiO
2 and SiC forming SiO and CO vapors at the SiO
2/SiC interface. The transition temperature could be calculated from the condition that the equilibrium SiO and CO vapor pressures exceed the ambient pressure.
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