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Ryo Takahashi, Yosuke Hamasaki, Shinya Sawai, Nikola Novak, Shintaro Y ...
2025Volume 133Issue 7 Pages
269-274
Published: July 01, 2025
Released on J-STAGE: July 01, 2025
Advance online publication: April 02, 2025
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BaTiO3-based ferroelectric family is one of the most studied ferroelectric materials for tunable microwave devices. However, a good tunable material should exhibit low dielectric losses at a high operating frequency and high stability of the dielectric tunability over a wide temperature range, which are conflicting parameters. This study aims to experimentally demonstrate the effects of thickness and temperature on the tunable dielectric properties of epitaxial Ba(Zr0.2Ti0.8)O3 [BZT] films deposited on (100) SrTiO3 [STO] substrates by the pulsed laser deposition. The crystal structure and electrical properties of the BZT films with different film thicknesses were investigated. Polarization–electric field curves and relative dielectric permittivity–electric field loops (εr–E) were measured to characterize the effect of film thickness on the dielectric tunability of the BZT films. Further, the εr–E loop was also characterized as a function of temperature. The coercive field decreased with increasing film thickness above 430 nm. The tunability values in the BZT film show little variations with temperature, indicating good temperature stability from −100 to 100 °C. These results show that the BZT film is a promising material for tunable capacitors.
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Zerui Li, Taro Kuwano, Akitoshi Nakano, Manabu Hagiwara, Shintaro Yasu ...
2025Volume 133Issue 7 Pages
275-280
Published: July 01, 2025
Released on J-STAGE: July 01, 2025
Advance online publication: February 18, 2025
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Supplementary material
Titanite-type oxides, ABMO5, have been recently recognized as a novel vein of antiferroelectric (AFE) materials due to their unique crystal structure including an antiparallel arrangement of polar chains. This study presents the results of synthesis, structure analysis, and dielectric measurement of titanite-type solid solutions (Ca,Pb)TiGeO5. With the Pb composition increasing, structural symmetry at room temperature changes from monoclinic to triclinic. We identified the crystal structure of PbTiGeO5 by Rietveld refinement similar to that of triclinic titanite-type CaZrGeO5. In addition, the AFE phase transition temperature is decreased by Pb substitution. These indicate the competition between triclinic and AFE distortions, in other words, lone-pair electrons on Pb2+ ions and the second-order Jahn–Teller effect on the Ti4+ ions.
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Kohei Noji, Yukie Yokota, Hiromi Shima, Hiroshi Funakubo, Hiroshi Uchi ...
2025Volume 133Issue 7 Pages
281-287
Published: July 01, 2025
Released on J-STAGE: July 01, 2025
Advance online publication: February 20, 2025
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Thin films of all-proportional PZT system, i.e., Pb(ZryTi1.00−y)O3 with y = 0–1.00, were deposited by hydrothermal deposition with a low reaction temperature of 150 °C. The PZT films were grown epitaxially on the surface of (100)SrTiO3:La substrates via a microwave-assisted hydrothermal reaction using various input ratios of precursor chemicals x = [ZrOCl2]/([ZrOCl2] + [TiO2]), which included more Zr ions (or less Ti ions) with a higher y value than that of the input ratio x. Dielectric and ferroelectric parameters for the resulting films, i.e., the relative dielectric constant (εr) and remanent polarization (Pr), exhibited maxima at the certain Zr/Ti ratio y = ∼0.60 though these parameters were relatively lower than those of the conventional films.
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Sota Totsuka, Takahiko Kawaguchi, Naonori Sakamoto, Naoki Wakiya
2025Volume 133Issue 7 Pages
288-293
Published: July 01, 2025
Released on J-STAGE: July 01, 2025
Advance online publication: March 13, 2025
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We prepared (001) oriented Cd0.9Mg0.1O thin films on soda-lime glass substrates using pulsed laser deposition (PLD). Use of the (001) oriented Cd0.9Mg0.1O thin film as a buffer layer was attempted to prepare VO2(R) (rutile) thin film. Because the lattice mismatch between the a-axis of VO2(R) (a = 0.4555 nm) and Cd0.9Mg0.1O (a = 0.4651) is slight (−2.06 %), we expected a (001) oriented VO2(R) thin film on Cd0.9Mg0.1O buffered glass. The results indicate (110) orientation, which is likely attributable to the influence of the surface energy of VO2(R). In the rutile structure, the (001) plane is unstable because the coordination number of the cations at the outermost surface is low. In contrast, the (110) plane has the lowest surface energy. Therefore, the surface energy of VO2(R) is considered to exert a stronger effect than the interaction between the substrate and the thin film. The temperature dependence of resistivity of VO2 thin films with thickness deposited on Cd0.9Mg0.1O buffered glass substrates revealed that no metal–insulator transition was observed for thinner VO2 thin film (thickness less than 59 nm). For large thickness (greater than 82 nm), then a clear metal–insulator transition was observed. This phenomenon was explained in terms of stress and oxygen vacancy. A similar result was obtained from measurement of the temperature dependence of IR transmittance with thickness. For 94-nm-thick VO2 thin film, IR transmittance change as high as 53.9 % was obtained.
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Yan Sun, Linlin Ke, Gia Guo, Xi Chen, Mario Tanaka, Yu Xiang, Yohachi ...
2025Volume 133Issue 7 Pages
294-301
Published: July 01, 2025
Released on J-STAGE: July 01, 2025
Advance online publication: March 20, 2025
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This study reports on the dielectric, piezoelectric, and microstructural properties of Pb(Mg1/3Nb2/3)O3–0.305PbTiO3 (PMN-PT) single crystals (SCs) prepared by the one-charge Bridgman method, focusing on the effects of varying AC cycles, 1 to 1600, of alternating current poling (ACP) on the piezoelectric properties. Optimal properties were obtained at a low electric field of 3 kVrms/cm with 80 ACP cycles of a 1.0 Hz bipolar sine wave, resulting in a dielectric constant (εT33/ε0) of 14700, a piezoelectric constant d33 of 4200 pC/N and a low dielectric loss of 0.24 %. These superior properties are among the best reported to date for piezoelectric SCs whose phase change temperatures exceed 75 °C. Scanning electron microscopy analysis revealed significant microstructural changes, including the formation of finely striped 1 to 4 µm 109° domain wall patterns (with an average width of 1.5 µm), which developed with increasing ACP cycles. A significant decrease in piezoelectric properties—low εT33/ε0 of 9500 and d33 of 2500 pC/N—were observed after 800 cycles, correlating with the microstructural change. The study demonstrates that precise control of ACP conditions is essential to achieve the desired piezoelectric properties in PMN-PT SC materials. These findings provide critical insights for optimizing the properties of PMN-PT SCs and their potential for high-performance piezoelectric applications.
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Kotaro Ogawa, Kazuki Shinozuka, Yumeng Zheng, Kenji Sakai, Shinzo Yosh ...
2025Volume 133Issue 7 Pages
302-307
Published: July 01, 2025
Released on J-STAGE: July 01, 2025
Advance online publication: March 26, 2025
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Tin-doped indium oxide (ITO) thin films are used extensively, particularly in flat-panel displays and photovoltaic cells, because of their exceptional electrical conductivity and high visible-light transmittance. However, ITO is expensive because one of its components is In, which is a rare metal, making a stable supply of ITO difficult to attain. The objective of the present study was to reduce the use of In in ITO by combining it with Al2O3, which is relatively inexpensive and highly transparent, and exhibits high mechanical strength. The resulting ITO–Al2O3 composite thin films were fabricated by aerosol deposition. The resultant films exhibited a resistivity of 4 × 10−3 Ω cm and a visible-light transmittance of 87 % at a wavelength of 600 nm, which are similar to the values for ITO films deposited by the same AD method. The resistivity remained almost constant with increasing volume fraction of Al2O3 in the composite thin film until the volume fraction reached 66 %, beyond which a notable increase in resistivity was observed. An increase in the gas flow rate resulted in a reduction in resistivity, with a strong correlation observed between the resistivity and the crystallite size determined by the Williamson–Hall method. Elemental analysis of the cross-section of a composite thin film indicated the presence of In and Al. The distribution of In was found to become more widespread and denser with increasing gas flow rate, indicating densification of the film. The visible-light transmittance exhibited a minimal dependence on the Al2O3 volume fraction.
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Yu-Ta Chen, Kazuki Okamoto, Nana Sun, Yuxian Hu, Nachi Chaya, Kohei Sh ...
2025Volume 133Issue 7 Pages
308-314
Published: July 01, 2025
Released on J-STAGE: July 01, 2025
Advance online publication: April 10, 2025
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Supplementary material
The dependence of ferroelectric properties on composition and film thickness was investigated for CeO2–HfO2 films with various ratios x = Ce/(Hf + Ce), deposited on polyethylene terephthalate coated with an amorphous indium tin oxide layer (amorphous ITO/PET) substrates without substrate heating. Additionally, the dependence of composition on piezoelectric properties was examined. X-ray diffraction (XRD) analysis showed that the films consisted of a tetragonal phase (T.) and/or orthorhombic (O.) phases with (111) and {100} out-of-plane orientations for the films with thicknesses ranging from 440 to 910 nm at x = 0.23. In addition, the remnant polarization (Pr) increased from 6.0 to 11.7 µC/cm2 with the increase in the film thickness. To investigate the composition dependence, CeO2–HfO2 films with a thickness of 800–1000 nm and x values of 0.17, 0.18, 0.23, and 0.28 were prepared. XRD showed (111) and {100} orientations in all films. Clear P-E hysteresis loops and switching currents were observed for x = 0.18 and 0.23, with Pr exceeding 10.0 µC/cm2, even in films deposited on amorphous ITO/PET without substrate heating. Moreover, these films exhibited piezoelectric properties consistent with P-E loops, showing their potential for flexible piezoelectric applications.
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Kensuke Matsumura, Shohei Kodama, Ikuo Yanase, Muneyasu Suzuki, Kazuma ...
2025Volume 133Issue 7 Pages
315-320
Published: July 01, 2025
Released on J-STAGE: July 01, 2025
Advance online publication: April 17, 2025
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This study investigates the influence of synthesis conditions on electrode performance by growing TiNb2O7 (TNO) single crystals, conducting single-crystal X-ray structural analysis, and comparing the resulting structures. The findings revealed that the site preferences of Ti4+ and Nb5+ within the five octahedral sites (M1–M5) remained unaffected by the synthesis atmosphere at low temperatures below 800 °C. However, an increase in synthesis temperature from 800 °C onwards enhanced the site preference, particularly at the M1 and M5 sites, displaying significant changes. Based on the anisotropy of ion conduction and the conduction mechanism of TNO, it is proposed that ion conduction is facilitated by the positioning of Ti4+ at the M1 site, which is characterized by many shared edges within the tunnel structure and plays a critical role in enabling Li-ion conduction. While the site selectivity of Ti4+ and Nb5+ remained constant across synthesis atmospheres, the observed increase in the lattice constant and electronic conductivity contributed to the charge–discharge characteristics. In contrast, the sample synthesized at 800 °C, which exhibited the highest charge–discharge performance among the temperature-varied samples, had the highest occupancy rate of Ti4+ at the M1 site. This occupancy is hypothesized to underpin its superior electrochemical performance.
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Kanaka Iwasaki, Yuka Takagi, Hyunwook Nam, Hajime Nagata, Isao Sakaguc ...
2025Volume 133Issue 7 Pages
321-328
Published: July 01, 2025
Released on J-STAGE: July 01, 2025
Advance online publication: April 25, 2025
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(Bi0.5Na0.5)TiO3 [BNT] ceramics can be sintered at low temperatures of 940 °C with CuO addition. This is believed to reduce Bi3+ volatilization and improve the quality of BNT-based ceramics by lowering the number of oxygen vacancies. However, there is no direct evidence that low-temperature sintering prevents the formation of oxygen vacancies. In this study, the formation of oxygen vacancies by 18O tracer diffusion and the additive effect of CuO on this formation in BNT ceramics were examined using secondary ion mass spectrometry (SIMS). In addition, Nb2O5, which acts as a donor, was added to the CuO-doped BNT ceramics. The formation of oxygen vacancies was discussed, and the electrical properties were clarified. As a result, the volume diffusion coefficients D of the BNT ceramics with 0.5 wt % CuO (Cu0.5) were 2.0 × 10−11 cm2/s. This value is equivalent to pure BNT, which means that for BNT ceramics, CuO acts as an acceptor, suggesting that BNT ceramics still contain many oxygen vacancies. On the other hand, the D of 18O in Cu0.5 added 0.4 wt % Nb2O5 was 3.5 × 10−15 cm2/s, indicating that the formation of oxygen vacancies is suppressed. Moreover, Nb2O5 enhanced the poling treatment and the coercive field Ec decreased, indicating a softening trend.
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Mizuki Ishida, Haruka Nada, Noriko Inaguma, Takanori Nagasaki, Masahit ...
2025Volume 133Issue 7 Pages
329-333
Published: July 01, 2025
Released on J-STAGE: July 01, 2025
Advance online publication: May 02, 2025
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The influence of A-site substitution in pyrochlore-type neodymium zirconate with smaller rare earth ions on dielectric properties was investigated. First-principles calculations for [Nd16Zr16O56] and [Nd15MZr16O56] (M = Sm, Gd, Y, Er, or Sc) predicted that Gd, Y, and Er have two types of six equivalent stable positions displaced from the original Nd position, generating a dipole moment. In addition, the energy barrier between these stable positions is below 10−2 eV, suggesting a potential enhancement of the dielectric constant. To validate the impact of substitution on dielectric properties, (Nd1−xGdx)2Zr2O7 (NGZO, x = 0.00, 0.0625, 0.25, 0.50, 0.75, 1.00) and (Nd1−xErx)2Zr2O7 (NEZO, x = 0.00, 0.0625, 0.15, 0.25, 0.50, 0.75, 1.00) were synthesized using the solid-state reaction method. X-ray diffraction confirmed the pyrochlore structure for NGZO (except at x = 1.00) and NEZO (for x ≤ 0.25). The lattice constant followed Vegard’s law within the compositional range of the pyrochlore phase. The dielectric constant slightly increased with increasing x (≤0.25) in NGZO, implying the contribution of dipole moments between Gd and its surrounding O ions.
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Linlin Ke, Yan Sun, Yu Xiang, Yohachi Yamashita, Takuya Namba, Ken Kit ...
2025Volume 133Issue 7 Pages
334-342
Published: July 01, 2025
Released on J-STAGE: July 01, 2025
Advance online publication: May 10, 2025
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Alternating current poled (ACP) (1 − x)Pb(Mg1/3Nb2/3)O3–xPbTiO3 (PMN–xPT) single crystals (SCs) exhibited 8–49 % higher piezoelectric strain constant length extensional mode (d31) at room temperature than direct current poled (DCP) SCs. However, thermal stability of these d31 was 13 to 69 °C lower for ACP SCs than for DCP SCs, indicating lower thermal stability. These results were obtained for four rhombohedral compositions of PMN–xPT SCs (x = 0.26, 0.295, 0.305, and 0.33) prepared by the one-charge Bridgman method. Microstructures observed by scanning electron microscopy showed that the average 109° domain walls width (ADW) gradually increased proportionally with increasing PT from PMN–0.26PT to PMN–0.33PT, with the highest d31 (−1700 pC/N) in the PMN–0.305PT SC. The PMN–0.26PT and PMN–0.33PT SCs showed almost the same piezoelectric properties, but their microstructures, ADW, and thermal stability were clearly different, indicating that ADW is not the only primary factor determining high piezoelectric properties. These experimental results suggest that accurate control of PMN–xPT SC composition, SC growth method, and optimal ACP condition setting are essential to simultaneously satisfy excellent piezoelectric properties and thermal stability after ACP.
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Mayu Moriya, Kosuke Ono, Naonori Sakamoto, Naoki Wakiya, Takahiko Kawa ...
2025Volume 133Issue 7 Pages
343-348
Published: July 01, 2025
Released on J-STAGE: July 01, 2025
Advance online publication: May 10, 2025
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Solid electrolyte Ta-substituted Li7La3Zr2O12 (LLZTO) epitaxial thin films were grown using LiOH-flux liquid phase epitaxy at 600 °C under the flow of N2 and H2O vapor mixture. Prior to the liquid phase epitaxy, amorphous La–Zr–Ta–O thin films were deposited on garnet-type Ga3Gd5O12 (GGG) substrates by dynamic aurora pulsed laser deposition for the thickness limitation and uniform film formation. Obtained thin films after liquid phase epitaxy, include Li content by X-ray photoemission spectroscopy. The epitaxial growth of LLZTO thin films on GGG(001), (110) and (111) substrates were confirmed by pole figures. The thin films had relatively low out-of-plane orientation degree despite liquid phase method. The surface observation reveals that the thin film surfaces consist of radially spreading regions with about 5–20 µm, which implies that the growth condition in this study was at higher supersaturation degree.
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Arisa Sakatani, Tomoki Uchiyama, Reona Omori, Koki Otonari, Guangfa Ya ...
2025Volume 133Issue 7 Pages
349-352
Published: July 01, 2025
Released on J-STAGE: July 01, 2025
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The discovery of elastic deformation induced mechanoluminescence (ML) has sparked significant research interest in developing materials capable of emitting both visible and invisible light for sensing and lighting applications across nano- to macro-scale systems. Among these, ML materials with near-infrared luminescence have garnered particular attention for medical and biological applications, as the scattering and absorption of biological tissues were reduced in near-infrared light. Zinc oxide (ZnO) is a promising candidate due to its high biocompatibility. Recent density functional theory (DFT) calculations have revealed that co-doping ZnO with Li and Nd leads to crystal softening, suggesting enhanced deformation susceptibility and improved luminescence efficiency. In this study, ZnO co-doped with Li and Nd was successfully synthesized, and near-infrared ML from a ZnO-based host material has been demonstrated for the first time.
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Hayato Sato, Shohei Kodama, Ikuo Yanase, Hiroaki Takeda
2025Volume 133Issue 7 Pages
353-357
Published: July 01, 2025
Released on J-STAGE: July 01, 2025
Advance online publication: March 29, 2025
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The photoluminescence properties of solid solutions of YNbO4, GdNbO4, and LuNbO4 were investigated to determine the rare earth composition that maximizes the intrinsic luminescence intensity. All samples exhibited a monoclinic β-fergusonite-type structure without impurity phases. The intrinsic luminescence intensity followed the order of GdNbO4, YNbO4 and LuNbO4, with GdNbO4 showing significantly low intensity due to concentration quenching and self-absorption by Gd3+. Among the solid solutions, (Y,Lu)NbO4 showed higher luminescence intensity than LuNbO4, with Y0.75Lu0.25NbO4 exhibiting the highest intensity, approximately 42 % higher than LuNbO4. Fluorescence lifetime measurements of (Y,Lu)NbO4 showed single-component decay curves with lifetimes ranging from 3.3 to 4.3 µs, with no significant differences or correlation with luminescence intensity.
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Tomoki Uchiyama, Mirei Okamoto, Haoze Su, Eiji Nishibori, Maiko Nishib ...
2025Volume 133Issue 7 Pages
358-362
Published: July 01, 2025
Released on J-STAGE: July 01, 2025
Advance online publication: May 02, 2025
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Mechanoluminescent materials exhibit light emission in response to mechanical stimuli. Its intensity is expected to be correlated with the local symmetry around the luminescent center. This study aimed to quantitatively investigate the correlation between the D index, representing the distortion of the oxide ion coordination polyhedron around the luminescence center, and mechanoluminescence (ML) intensity, focusing on four representative ML materials. The materials studied, including SrAl2O4:Eu (SAO), Sr3Sn2O7:Sm (SSS), (Li,Na)NbO3 (LNNO), and Sr3Sn2O7:Nd (SSN), exhibited visible and near-infrared ML. For these materials, the average D index, considering the occupancy and multiplicity of luminescent center, was determined from the Rietveld analysis of X-ray powder diffraction patterns, and a quantitative comparison was made with ML intensity. A quantitative correlation between the D index and ML intensity was observed within the same host crystal structure. This demonstrates that the D index is an effective indicator in material development to enhance ML intensity. The study revealed that when multiple host ion sites are available for the luminescence center, preferentially substituting the sites with a lower D index is crucial. This research provides valuable insights for developing high-performance ML materials.
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Masahiko Araki, Yuki Sakai, Yoshiki Iwazaki
2025Volume 133Issue 7 Pages
363-367
Published: July 01, 2025
Released on J-STAGE: July 01, 2025
Advance online publication: January 25, 2025
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First-principles and molecular dynamics simulations are used to understand the stability and defect state of vanadium ions at BaTiO3 grain boundaries. Qualitative analysis is performed based on two approaches to approximate polycrystalline grain boundaries. First, stable grain boundaries are modeled to evaluate the defect formation energies of grain boundary sites and bulk sites. Second, amorphous BaTiO3 is used to analyze the relationship between defect structure and stability of vanadium. The electronic states of vanadium atoms in the amorphous state are statistically analyzed to understand the effect of complex structures such as grain boundaries. These results suggest that vanadium acts as a donor at grain boundaries.
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