JSAP Annual Meetings Extended Abstracts

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The 64th JSAP Spring Meeting 2017

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Controlled interface between MoS₂ and molecule toward carrier control

Hisashi Ichimiya, Kohei Miura, Takeshi Yoshimura, Atsushi Ashida, Nori ...

Session ID: 16a-F203-5
Published: March 01, 2017
Released on J-STAGE: November 23, 2022

DOIhttps://doi.org/10.11470/jsapmeeting.2017.1.0_3901

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Barrier thickness dependence of current in sputtering MoS₂ film with tunnel contacts

Naoki Hayakawa, Iriya Muneta, Takumi Ohashi, Kentarou Matsuura, Junich ...

Session ID: 16a-F203-6
Published: March 01, 2017
Released on J-STAGE: November 23, 2022

DOIhttps://doi.org/10.11470/jsapmeeting.2017.1.0_3902

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New Functional Materials Fabricated from Exfoliation/Assembly of Layered Oxides

Minoru Osada, Takayoshi Sasaki

Session ID: 16a-F203-7
Published: March 01, 2017
Released on J-STAGE: November 23, 2022

DOIhttps://doi.org/10.11470/jsapmeeting.2017.1.0_3903

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Fabrication of enhancement-mode MoS₂ transistors by ozone oxidation

Nobuhiko Adachi, Yoshihiko Shimokawa, Kosuke Sano, Takahisa Tanaka, Ts ...

Session ID: 16a-F203-8
Published: March 01, 2017
Released on J-STAGE: November 23, 2022

DOIhttps://doi.org/10.11470/jsapmeeting.2017.1.0_3904

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Crystallinity of top & bottom surface of CVD-MoS₂ interacting with substrate

Sora Kurabayashi, Kosuke Nagashio

Session ID: 16a-F203-9
Published: March 01, 2017
Released on J-STAGE: November 23, 2022

DOIhttps://doi.org/10.11470/jsapmeeting.2017.1.0_3905

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Fabrication of thin film transistors using solution processed MoS₂ directly deposited on high-k oxide film for thin film transistor

Joonam Kim, Kennichi Haga, Eisuke Tokumitsu

Session ID: 16a-F203-10
Published: March 01, 2017
Released on J-STAGE: November 23, 2022

DOIhttps://doi.org/10.11470/jsapmeeting.2017.1.0_3906

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Resonance characteristics of MoS2 thin layer mechanical resonator

Daiki Yoshikawa, Yuga MIyamoto, Kuniharu Takei, Takayuki Arie, Seiji A ...

Session ID: 16a-F203-11
Published: March 01, 2017
Released on J-STAGE: November 23, 2022

DOIhttps://doi.org/10.11470/jsapmeeting.2017.1.0_3907

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Solution-based Molecular Surface Treatments on Transition Metal Dichalcogenides

Daisuke Kiriya

Session ID: 16p-F203-1
Published: March 01, 2017
Released on J-STAGE: November 23, 2022

DOIhttps://doi.org/10.11470/jsapmeeting.2017.1.0_3908

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Investigating Crystal Orientation of Sputtering Deposited MoS₂ Thin Film by Analyzing Scaling Behavior of The Surface Roughness

SEIYA ISHIHARA, BUNTA OHNO, YUSUKE HIBINO, NAOMI SAWAMOTO, TAKUMI OHAS ...

Session ID: 16p-F203-2
Published: March 01, 2017
Released on J-STAGE: November 23, 2022

DOIhttps://doi.org/10.11470/jsapmeeting.2017.1.0_3909

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Change in Electronic Property of Atomically-Thin Hetero-Interface System with Applied Electrode Bias

Kenji Iida, Masashi Noda, Katsuyuki Nobusada

Session ID: 16p-F203-3
Published: March 01, 2017
Released on J-STAGE: November 23, 2022

DOIhttps://doi.org/10.11470/jsapmeeting.2017.1.0_3910

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Characterization of twin boundary of CVD-grown MoS₂

Yusuke Kureishi, Mitsuhiro Okada, Shoji Yoshida, Kenji Watanabe, Takas ...

Session ID: 16p-F203-4
Published: March 01, 2017
Released on J-STAGE: November 23, 2022

DOIhttps://doi.org/10.11470/jsapmeeting.2017.1.0_3911

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Size effect of catalyst nanorparticles for the growth of MoS₂ nanowires

Mengting Weng, Takashi Yanase, Taro Nagahama, Toshihiro Shimada

Session ID: 16p-F203-5
Published: March 01, 2017
Released on J-STAGE: November 23, 2022

DOIhttps://doi.org/10.11470/jsapmeeting.2017.1.0_3912

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Stabilities and Electronic Structure of Vacancies in MoS₂/MoS₂ and MoS₂/MoSe₂

Syu Urasaki, Hiroyuki Kageshima

Session ID: 16p-F203-6
Published: March 01, 2017
Released on J-STAGE: November 23, 2022

DOIhttps://doi.org/10.11470/jsapmeeting.2017.1.0_3913

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Structures and electronic properties of group-IV ternary alloy monolayers

Toru Akiyama, Go Yoshimura, Kohji Nakamura, Tomonori Ito

Session ID: 16p-F203-7
Published: March 01, 2017
Released on J-STAGE: November 23, 2022

DOIhttps://doi.org/10.11470/jsapmeeting.2017.1.0_3914

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MBE growth of GaSe thin films on Ge(111) substrates

Takahiro Yonezawa, Tatsuya Murakami, Koichi Higashimine, Antoine Fleur ...

Session ID: 16p-F203-8
Published: March 01, 2017
Released on J-STAGE: November 23, 2022

DOIhttps://doi.org/10.11470/jsapmeeting.2017.1.0_3915

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Formation of Sn monolayer on SiC surface and Graphene/SiC interface

Shingo Hayashi, Takashi Kajiwara, Anton Visikovskiy, Takushi Iimori, F ...

Session ID: 16p-F203-9
Published: March 01, 2017
Released on J-STAGE: November 23, 2022

DOIhttps://doi.org/10.11470/jsapmeeting.2017.1.0_3916

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Pinpoint pick up & bubble-free assembly of 2D materials using PDMS/PMMA with lens shape

Satoshi Toyoda, Teerayut Uwanno, Kosuke Nagashio

Session ID: 16p-F203-10
Published: March 01, 2017
Released on J-STAGE: November 23, 2022

DOIhttps://doi.org/10.11470/jsapmeeting.2017.1.0_3917

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Controlling Morphology of hBN crystals during chemical Vapor deposition synthesis

Subash sharma, Golap Kalita, Masaki Tanemura

Session ID: 16p-F203-11
Published: March 01, 2017
Released on J-STAGE: November 23, 2022

DOIhttps://doi.org/10.11470/jsapmeeting.2017.1.0_3918

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Random telegraph signal in the time-dependent dielectric breakdown test for h-BN

Yoshiaki Hattori, Takashi Taniguchi, Kenji Watanabe, Kosuke Nagashio

Session ID: 16p-F203-12
Published: March 01, 2017
Released on J-STAGE: November 23, 2022

DOIhttps://doi.org/10.11470/jsapmeeting.2017.1.0_3919

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Exciton dynamics in monolayer WS₂ encapsulated by hBN

Yusuke Hoshi, Takashi Kuroda, Mitsuhiro Okada, Rai Moriya, Satoru Masu ...

Session ID: 16p-F203-13
Published: March 01, 2017
Released on J-STAGE: November 23, 2022

DOIhttps://doi.org/10.11470/jsapmeeting.2017.1.0_3920

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Current jump and memory effect in field effect transistor using atomic layer materials observed at high temperature operation

Tomoki Yamanaka, Ayaka Higuchi, Masahiro Matsunaga, Kota Kamiya, Guanc ...

Session ID: 16p-F203-14
Published: March 01, 2017
Released on J-STAGE: November 23, 2022

DOIhttps://doi.org/10.11470/jsapmeeting.2017.1.0_3921

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Development of an electric field double layer transistor/superconductor junction based on MoS₂

Kohei Tsumura, Yumika Aikawa, Tomoe Narita, Hideaki Takayanagi, Ryosuk ...

Session ID: 16p-F203-15
Published: March 01, 2017
Released on J-STAGE: November 23, 2022

DOIhttps://doi.org/10.11470/jsapmeeting.2017.1.0_3922

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Fabrication of Si doped α-Ga₂O₃ for device applications

Takayuki Uchida, Riena Jinno, Shu Takemoto, Kentaro Kaneko, Shizuo Fuj ...

Session ID: 14a-502-1
Published: March 01, 2017
Released on J-STAGE: November 23, 2022

DOIhttps://doi.org/10.11470/jsapmeeting.2017.1.0_3923

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Crystal Orientation of beta-Ga₂O₃ Thin Films Formed on MgO Substrates

Shinji Nakagomi, Yoshihiro Kokubun

Session ID: 14a-502-2
Published: March 01, 2017
Released on J-STAGE: November 23, 2022

DOIhttps://doi.org/10.11470/jsapmeeting.2017.1.0_3924

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Heteroepitaxial growth of β-Ga₂O₃:Si (100) films on MgO (100) substrates

Ryo Wakabayashi, Mai Hattori, Kohei Yoshimatsu, Akira Ohtomo

Session ID: 14a-502-3
Published: March 01, 2017
Released on J-STAGE: November 23, 2022

DOIhttps://doi.org/10.11470/jsapmeeting.2017.1.0_3925

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Orientation control of β-Ga₂O₃ epitaxial thin films formed by room-temperature laser annealing

Kisho Nakamura, Hiroki Uchida, Nobuo Tuchimine, Satoru Kaneko, Akifumi ...

Session ID: 14a-502-4
Published: March 01, 2017
Released on J-STAGE: November 23, 2022

DOIhttps://doi.org/10.11470/jsapmeeting.2017.1.0_3926

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Evaluation of band-gap of β-(Al_xGa_1-_x)₂O₃ films grown on β-Ga₂O₃ (100) substrates

Mai Hattori, Ryo Wakabayashi, Kohei Sasaki, Takekazu Masui, Akito Kura ...

Session ID: 14a-502-5
Published: March 01, 2017
Released on J-STAGE: November 23, 2022

DOIhttps://doi.org/10.11470/jsapmeeting.2017.1.0_3927

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Observation of carrier confinement at a β-(Al_xGa_1-x)₂O₃/Ga₂O₃ heterojunction interface

Yuji Kato, Takayoshi Oshima, Naoto Kawano, Akito Kuramata, Shigenobu Y ...

Session ID: 14a-502-6
Published: March 01, 2017
Released on J-STAGE: November 23, 2022

DOIhttps://doi.org/10.11470/jsapmeeting.2017.1.0_3928

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Band gap engineering of γ-(Al_xGa_1-x)₂O₃ alloy system

Yuji Kato, Takayoshi Oshima, Masaya Oda, Toshimi Hitora, Makoto kasu

Session ID: 14a-502-7
Published: March 01, 2017
Released on J-STAGE: November 23, 2022

DOIhttps://doi.org/10.11470/jsapmeeting.2017.1.0_3929

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Fabrication and Structural Characterization of α-Ga₂O₃ Thin Films on m-plane Sapphire Substrates by Mist Chemical Vapor Deposition

Katsuya Ota, Takahito Sekiyama, Kazuaki Akaiwa, Tomoki Abe, Kunio Ichi ...

Session ID: 14a-502-8
Published: March 01, 2017
Released on J-STAGE: November 23, 2022

DOIhttps://doi.org/10.11470/jsapmeeting.2017.1.0_3930

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Control of Ga₂O₃ Crystal Structure by introducing of α-(Al_xGa_1-x)₂O₃ Buffer Layer

Riena Jinno, Takayuki Uchida, Kentaro Kaneko, Shizuo Fujtia

Session ID: 14a-502-9
Published: March 01, 2017
Released on J-STAGE: November 23, 2022

DOIhttps://doi.org/10.11470/jsapmeeting.2017.1.0_3931

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Stoichiometry control for groeth of ε-Ga₂O₃ by mist CVD method

Daisuke Tahara, Hiroyuki Nishinaka, Masahiro Yoshimoto

Session ID: 14a-502-10
Published: March 01, 2017
Released on J-STAGE: November 23, 2022

DOIhttps://doi.org/10.11470/jsapmeeting.2017.1.0_3932

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Study on Surface Band Bending of α-Ga₂O₃

Yoshiki Fujiki, Junjiro Kikawa, Tsutomu Araki, Yasushi Nanishi, Masaya ...

Session ID: 14p-502-1
Published: March 01, 2017
Released on J-STAGE: November 23, 2022

DOIhttps://doi.org/10.11470/jsapmeeting.2017.1.0_3933

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Evaluation of defects in EFG-grown β-Ga₂O₃ crystals (1) - Dislocations corresponding to arrays of etch pits on (201) substrates -

Osamu Ueda, Noriaki Ikenaga, Tomoya Moribayashi, Kimiyoshi Koshi, Kazu ...

Session ID: 14p-502-2
Published: March 01, 2017
Released on J-STAGE: November 23, 2022

DOIhttps://doi.org/10.11470/jsapmeeting.2017.1.0_3934

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Optical and electric properties for VB, FZ and EFG grown β-Ga₂O₃ single crystals

Takahiro Nakamura, Yuta Uchiyama, Toshinori Taishi, Keigo Hoshikawa

Session ID: 14p-502-3
Published: March 01, 2017
Released on J-STAGE: November 23, 2022

DOIhttps://doi.org/10.11470/jsapmeeting.2017.1.0_3935

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Relationship between crystal defects and leakage current of (-201) β-Ga₂O₃ Schottky barrier diodes

Tomoya Moribayashi, Akihiro Hashiguchi, Takayoshi Oshima, Kenji Hanada ...

Session ID: 14p-502-4
Published: March 01, 2017
Released on J-STAGE: November 23, 2022

DOIhttps://doi.org/10.11470/jsapmeeting.2017.1.0_3936

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Relationship of crystal defects and leakage current of (001) β-Ga₂O₃Schottky barrier diodes

Akihiro Hashiguchi, Tomoya Moribayashi, Takahito Oshima, Toshiyuki Ois ...

Session ID: 14p-502-5
Published: March 01, 2017
Released on J-STAGE: November 23, 2022

DOIhttps://doi.org/10.11470/jsapmeeting.2017.1.0_3937

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Temperature Dependence of Current-voltage Characteristics of Hetero-junction Diode between NiO and beta-Ga₂O₃

Shinji Nakagomi, Shohei Kubo, Yoshihiro Kokubun

Session ID: 14p-502-6
Published: March 01, 2017
Released on J-STAGE: November 23, 2022

DOIhttps://doi.org/10.11470/jsapmeeting.2017.1.0_3938

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Effect of Nitridation on Properties of AlN/β-Ga₂O₃ Composite Structures

Ravikiran Lingaparthi, Yoshiaki Nakata, Akito Kuramata, Shigenobu Yama ...

Session ID: 14p-502-7
Published: March 01, 2017
Released on J-STAGE: November 23, 2022

DOIhttps://doi.org/10.11470/jsapmeeting.2017.1.0_3939

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Solid-phase crystallization of amorphous V-doped ZnO film on Al₂O₃(11-20) substrate

Kenta Shito, Akihiro Watanabe, Hioshi Chiba, Tomoyuki Kawashima, Katsu ...

Session ID: 14p-502-8
Published: March 01, 2017
Released on J-STAGE: November 23, 2022

DOIhttps://doi.org/10.11470/jsapmeeting.2017.1.0_3940

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Initial growth pattern of V and N co-doped ZnO on Al₂O₃(001) substrate

Tomohiro Kanematsu, Hiroshi Chiba, Tomoyuki Kawashima, Katsuyoshi Wash ...

Session ID: 14p-502-9
Published: March 01, 2017
Released on J-STAGE: November 23, 2022

DOIhttps://doi.org/10.11470/jsapmeeting.2017.1.0_3941

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Epitaxial Growth of NiO thin films on α-Al₂O₃ substrates by mist CVD method

Takumi Ikenoue, Junki Inoue, Masao Miyake, Tetsuji Hirato

Session ID: 14p-502-10
Published: March 01, 2017
Released on J-STAGE: November 23, 2022

DOIhttps://doi.org/10.11470/jsapmeeting.2017.1.0_3942

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MOCVD deposition of Fe-doped NiO films using Tris(2,4-pentanedionato)iron(Ⅲ) as Fe source

Shungo Sakai, Kentaro Taguchi, Kazuki Fujiwara, Hiroyasu Ishikawa

Session ID: 14p-502-11
Published: March 01, 2017
Released on J-STAGE: November 23, 2022

DOIhttps://doi.org/10.11470/jsapmeeting.2017.1.0_3943

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Relation between Electrical and Optical properties of p-type NiO Films

Mizuki Ono, Takeyoshi Onuma, Ryosuke Goto, Kohei Sasaki, Hiroki Nagai, ...

Session ID: 14p-502-12
Published: March 01, 2017
Released on J-STAGE: November 23, 2022

DOIhttps://doi.org/10.11470/jsapmeeting.2017.1.0_3944

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MOCVD growth of CuO thin films on C-sapphire, YSZ (111) and MgO (111) substrates

Kazuki Fujiwara, Kentaro Taguchi, Syungo Sakai, Hiroyasu Ishikawa

Session ID: 14p-502-13
Published: March 01, 2017
Released on J-STAGE: November 23, 2022

DOIhttps://doi.org/10.11470/jsapmeeting.2017.1.0_3945

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Reaction mechanism analysis for fabricating high quality metal oxide thin film by mist CVD (Ⅰ)

Misaki Nishi, Yuta Suwa, Liu Li, Phimolphan Rutthongja, Dang Gian, Tos ...

Session ID: 14p-502-14
Published: March 01, 2017
Released on J-STAGE: November 23, 2022

DOIhttps://doi.org/10.11470/jsapmeeting.2017.1.0_3946

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Low Temperature Formation of ZnO Films by Mist-CVD

Tomoki Mikuriya, Ogawa Hirotaka, Kido Tomotaka, Yatabe Zenji, Nishi Ya ...

Session ID: 14p-502-15
Published: March 01, 2017
Released on J-STAGE: November 23, 2022

DOIhttps://doi.org/10.11470/jsapmeeting.2017.1.0_3947

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Electrical and optical properties of Al and V co-doped ZnO thin films

Chisato Tateyama, Tomoya Suzuki, Hiroshi Chiba, Tomoyuki Kawashima, Ka ...

Session ID: 15a-502-1
Published: March 01, 2017
Released on J-STAGE: November 23, 2022

DOIhttps://doi.org/10.11470/jsapmeeting.2017.1.0_3948

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The controllable crystallographic orientation of polycrystalline transparent conductive Al-doped ZnO films deposited by direct current magnetron sputtering

Junichi Nomoto, Hisashi Kitami, Takeshi Watanabe, Hisao Makino, Toshiy ...

Session ID: 15a-502-2
Published: March 01, 2017
Released on J-STAGE: November 23, 2022

DOIhttps://doi.org/10.11470/jsapmeeting.2017.1.0_3949

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Homogeneous and Low Resistivity Films of Ga-doped ZnO by Zn Layer Insertion

Yasuji Yamada, Orkut Sancakoglu, Rei Sugiura, Motonari Shoriki, Shuhei ...

Session ID: 15a-502-3
Published: March 01, 2017
Released on J-STAGE: November 23, 2022

DOIhttps://doi.org/10.11470/jsapmeeting.2017.1.0_3950

CONFERENCE PROCEEDINGS FREE ACCESS

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