The Review of High Pressure Science and Technology
Online ISSN : 1348-1940
Print ISSN : 0917-639X
ISSN-L : 0917-639X
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Showing 1-9 articles out of 9 articles from the selected issue
Foreword
Reviews—Pressure-Tuning of Novel Superconductivity in Strongly Correlated Electron Systems—
  • Kazuto AKIBA, Masashi TOKUNAGA
    2020 Volume 30 Issue 4 Pages 260-273
    Published: 2020
    Released: April 23, 2021
    JOURNALS FREE ACCESS

    In this article, we review our exploration of unconventional electronic states near the metal-insulator boundary in black phosphorus and lead telluride, which have long been known as narrow-gap semiconductors with simple crystal structure. In such low carrier systems with high mobility, the energy band structure and physical property can be drastically affected by application of high magnetic field and high pressure. High pressure is a powerful tool to continuously tune the band structure from semiconductor to semimetal without degradation of the mobility.

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  • Takako KONOIKE, Kazuhito UCHIDA, Toshihito OSADA
    2020 Volume 30 Issue 4 Pages 274-280
    Published: 2020
    Released: April 23, 2021
    JOURNALS FREE ACCESS

    It is becoming evident that Dirac fermions are present in several materials other than graphene. The organic conductor α-(BEDT-TTF)2I3 is known to be a first bulk crystal which realizes a massless Dirac fermion system under high pressure. By taking advantage of its bulk nature, we experimentally study the thermodynamic and thermoelectric properties of Dirac fermions by using this system. Here, we will show the experimental technique and experimental results of the specific heat and thermopower of α-(BEDT-TTF)2I3 under high pressure.

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  • Ayako OHMURA
    2020 Volume 30 Issue 4 Pages 281-289
    Published: 2020
    Released: April 23, 2021
    JOURNALS FREE ACCESS

    In this article, the effects of pressure on topological quantum materials, a polar semiconductor BiTeBr and a type-II Dirac semimetal PdTe2, are reviewed. The first topic is the pressure-induced trivial-nontrivial electronic transition in BiTeBr. I explain that the topological transition was clearly revealed by the Wilson-loop analysis used for evaluating topological Z2 invariants. The second topic is the introduction of superconducting properties of PdTe2 under multi-extreme conditions. I report an unusual superconducting phase diagram in addition to experimental results of electrical resistivity and ac-susceptibility in PdTe2.

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  • Takashi NAKA, Anne DE VISSER
    2020 Volume 30 Issue 4 Pages 290-297
    Published: 2020
    Released: April 23, 2021
    JOURNALS FREE ACCESS

    We present a review of the superconducting properties of Cu, Sr and Nb doped Bi2Se3 compounds with a focus on high pressure effects. The parent compound Bi2Se3 is a topological insulator at ambient pressure and exhibits pressure-induced crystallographic phase transitions and superconductivity above 10 GPa. The doped compounds are all bulk superconductors with Tc~3 K and have been investigated intensively in the past decade because of their candidature for topological superconductivity (TSC). A key role as regards topological superconductivity is played by spontaneous rotational symmetry breaking (RSB), which is observed, for instance, as an anisotropy in the upper critical field Bc2. We discuss the pressure variation of Tc and the concomitant effect on the upper critical field. An analysis of the basal-plane anisotropy of Bc2 is presented in the context of an odd-parity unconventional superconducting state.

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  • Fumitoshi IGA, Wataru MATSUHRA, Tomoko KAGAYAMA, Takeshi MITO
    2020 Volume 30 Issue 4 Pages 298-308
    Published: 2020
    Released: April 23, 2021
    JOURNALS FREE ACCESS

    In this article, recent topics in the high-pressure synthesis and physical properties under high pressure circumstance on Topological Kondo Insulators SmB6 and YbB12 were reviewed. As for high pressure synthesis of substitution by Ca for YbB12, high-pressure equipment using the Walker module is introduced. This equipment is used for material development of novel RB12. Furthermore some physical properties of SmB6 and YbB12 under high pressure condition are also introduced.

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