The interface fracture between sub-micron films can be classified into two types: opening mode and sliding mode. Corresponding to fracture mode, the interface strength should be evaluated quantitatively, but it is difficult to apply mode-controlled load. In this study, the criteria of crack initiation at the edge of interface between thin films for an LSI are examined under opening mode and sliding mode, respectively. Not only the evaluation method for opening mode but also that for sliding mode is proposed. The Si
3N
4/Cu/TaN films on a Si substrate is tested. The crack initiates at the Si
3N
4 (thickness: 100 nm)/Cu (thickness: 400 nm) interface in both modes. Stress analysis reveals that singularity fields of σ
xy and τ
xy appear near the edge in opening mode and sliding mode, respectively. On the basis of fracture mechanics concept, the interface fracture toughness of both modes are evaluated. The fracture toughness of sliding mode is smaller than that of opening mode and it is a characteristic of the interface strength between thin films.
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