Reactive diffusion of the Pt–Si system has been studied by using bulk Pt/bulk Si single crystal diffusion couples in the temperature range from 673 to 923 K in an evacuated atmosphere of 10
−2 Pa. To study the effect of the atmosphere on the growth rate of the diffusion layers, some diffusion couples have been annealed at 673, 873 and 923 K at a pressure 10
−5 Pa. The experimental results were compared with the previous results obtained by using Pt thin film/bulk Si diffusion couples.
In the bulk Pt/Si diffusion couples annealed at 673 K for 3.6 ks or more, Pt
2Si and PtSi have been found. The silicides, Pt
3Si, Pt
7Si
3 and Pt
6Pt
5 were formed above 723 K. All of them grew satisfying the parabolic law.
The interdiffusion coefficients of PtSi and Pt
2Si in bulk samples almost coincide with the minimum values for thin film diffusion couples, respectively, in spite of a general recognition that interdiffusion in thin film diffusion couples can occur faster than in bulk sample at low temperature.
This result partly supports our previous result of reactive diffusion in the Ni–Si system that any apparent difference between the diffusion phenomenon in bulk and thin film diffusion couples could not be found.
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