We have focused on genomic abnormalities in angioimmunoblastic T-cell lymphoma (AITL). Furthermore, we are continuing research to utilize the findings of these genomic abnormalities in diagnosis and treatment of AITL. Hopefully, this research will lead to improved management of AITL patients in the near future.

Functional metal oxides with strongly correlated electron system, such as vanadium dioxide, manganite, and so on show first-order metal-insulator phase transition (MIT) with a change in conductivity by several orders magnitude. Since the novel properties of the metal oxides are dominated by competing nanoscale and/or microscale electronic phases, to understand exotic nanoscale electronic domain properties and utilize their superior properties as device functionalities, the three-dimensional (3D) nano-structuring is one of the most effective approaches. In this paper, I show our original nanofabrication technique, which realizes the construction of the well-defined 3D metal oxide nanostructures in atomic resolution. The nano-confinement of the electronic domains can allow direct investigation of its MIT properties. We revealed that a single electronic nanodomain exhibited an intrinsic first-order MIT and their transition points were distributed. These results are the first demonstration approaching the transition dynamics, which can be a good guideline for realizing the functional nanoelectronic devices based on the functional metal oxides.

Recently, progress in nanotechnology and development of new material have enabled us to observe and control not only quantum phenomena but also relativistic quantum phenomena, both of which manifest themselves in nanostructured semiconductors. Consequently, exotic physics is being discovered day by day and quantum devices with new functionalities are being realized all over the world. In this paper, we report relativistic quantum phenomena observed in semiconductor nanodevices, including epitaxial graphene grown on silicon carbide and III-V semiconductor nanowire FETs. For epitaxial graphene, we report on experiments on quantum Hall effect and quantum capacitances, which reflect the Dirac cone band structure of graphene. For III-V semiconductor nanowires, we demonstrate highly efficient electric-field control of spin-orbit interaction, which appears as a consequence of the relativistic quantum effect.

When I was in fifth grade, I saw the newspaper article about the establishment of the Society of Japanese Women Scientists (SJWS). Since then, I came to aspire to be a female researcher. Upon receiving the 2020 Distinguished Service Award of SJWS, I tried to follow my path from the entrance into Faculty of Science, Ochanomizu University to becoming a SJWS member. Further, in this essay, my memories of activities at SJWS under the 2nd ~ 5th Presidents and the impressive activities performed while I served as the 6th President are described. I hope this article helps develop future activities of SJWS.