Yttrium oxide, Y
2O
3, was deposited on a Si (001) substrate in ultrahigh vacuum by the simultaneous irradiation of arc plasma of yttrium and hyperthermal atomic oxygen, the principles and procedures of which were introduced in the preceding article. X-ray photoelectron spectroscopy revealed that the stoichiometry of Y
2O
3 was identical from the top to the bottom of the film. Y
2O
3 film deposited at a substrate temperature of 300℃, followed by a post-annealing process at 700℃, showed a low friction coefficient of approximately 0.1. At +high deposition temperatures, e.g. 500℃ and 700℃, faint Si2p peak was detected at an early stage of Ar depth profiling. Presumably, this may lead to inferior film properties. Low friction as well as good adhesion property of Y
2O
3 film to the Si(001) seems applicable to protective coating of MEMS (microelectromechanical systems) and other Si technologies.
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