The influences of interactions between C
60 thin films and Si substrates were investigated using atomic force microscopy (AFM). It was found that higher friction coefficient was obtained at the C
60 domains formed on the H-terminated Si(001) substrate and lower ones on the Si(001)-2×1 substrate. Moreover, lowest friction coefficient was found for the C
60 film on the Si(001)-2×1 remained after scratching. Therefore, it is thought that higher interactions between C
60 and Si substrate caused lower friction coefficient of C
60 thin film. The prepared substrate was examined by reflection high energy electron diffraction (RHEED), X-ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy (AES).
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