InGaAs photo field-effect transistors (photoFETs) on Si is one of the promising candidates for a high responsivity Short-Wave Infra-Red (SWIR) photodetector toward monolithic integration with Si-LSI. We have demonstrated InGaAs photoFETs integrated on Si through layer transfer technology. According to the scanning transmission electron microscopy (STEM) and Raman measurement, the InGaAs layer was transferred onto Si without the degradation of crystal quality or the introduction of strain. To evaluate the SWIR photosensitivity of InGaAs photoFETs, we derive the spectral responsivity characteristics at a constant incident power from 1000 nm to 1800 nm. It is found that InGaAs photoFETs present higher and broader responsivity than that of InGaAs photodiode in the SWIR region.
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