The effects of artificial pinning centers (APCs) in ErBa
2Cu
3O
7-δ films are discussed. The APC used for this research was BaZrO
3 which was mixed into an ErBa
2Cu
3O
7-δ ceramic target. The target was ablated and the films were grown on substrates with APCs. The X-ray diffraction patterns show that there were no other phases than ErBa
2Cu
3O
7-δ and BaZrO
3. Transmission electron microscopy (TEM) revealed that the BaZrO
3 APSs grow along the
c-axis of the films. The introduction of APCs decreases the surface resistance of the ErBa
2Cu
3O
7-δ film and dramatically increases the critical current density (
JC). Strong
JC enhancement at the B¦¦
c-axis coincides with the growth direction of the APCs.
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