Type-II InGaAsSb-Base Double Heterojunction Bipolar Transistors Simultaneously Exhibiting over 600-GHz fmax and 5-V Breakdown Voltage

Norihide KASHIO; Takuya HOSHI; Kenji KURISHIMA; Minoru IDA; Hideaki MATSUZAKI

doi:10.1587/transele.E99.C.522

Special Section on Fundamentals and Applications of Advanced Semiconductor Devices

Type-II InGaAsSb-Base Double Heterojunction Bipolar Transistors Simultaneously Exhibiting over 600-GHz f_max and 5-V Breakdown Voltage

Norihide KASHIO, Takuya HOSHI, Kenji KURISHIMA, Minoru IDA, Hideaki MATSUZAKI

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Keywords: heterojunction bipolar transistors, InP, InGaAsSb, GaAsSb

JOURNAL RESTRICTED ACCESS

2016 Volume E99.C Issue 5 Pages 522-527

DOI https://doi.org/10.1587/transele.E99.C.522

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Abstract

This paper investigates current-gain and high-frequency characteristics of double heterojunction bipolar transistors (DHBTs) with a uniform GaAsSb, compositionally graded GaAsSb, uniform InGaAsSb, or compositionally graded InGaAsSb base. DHBTs with a compositionally graded InGaAsSb base exhibit a high current gain of ∼75 and f_T=504GHz. In order to boost f_max of DHBTs with a compositionally graded InGaAsSb base, a highly doped GaAsSb base contact layer is inserted. The fabricated DHBTs exhibit f_T/f_max=513/637GHz and a breakdown voltage of 5.2V.

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