IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Current issue
Displaying 1-4 of 4 articles from this issue
Regular Section
  • Quoc-Trinh VO, Quang-Thang DUONG, Minoru OKADA
    Article type: PAPER
    Subject area: Electromagnetic Theory
    2022 Volume E105.C Issue 8 Pages 358-368
    Published: August 01, 2022
    Released on J-STAGE: August 01, 2022
    Advance online publication: January 31, 2022
    JOURNAL FREE ACCESS

    This paper proposes constant voltage design based on K-inverter for cooperative inductive power transfer (IPT) where a nearby receiver picks up power and simultaneously cooperates in relaying the signal toward another distant receiver. In a cooperative IPT system, wireless power is fundamentally transferred to the nearby receiver via one K-inverter and to the distant receiver via two K-inverters. By adding one more K-inverter to the nearby receiver, our design is among the simplest methods as it delivers constant output voltage to each receiver via two K-inverters only. Experimental results verify that the proposed cooperative IPT system can stabilize two output voltages against the load variations while attaining high RF-RF efficiency of 90%.

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  • Naoto MATSUO, Kazuki YOSHIDA, Koji SUMITOMO, Kazushige YAMANA, Tetsuo ...
    Article type: PAPER
    Subject area: Semiconductor Materials and Devices
    2022 Volume E105.C Issue 8 Pages 369-374
    Published: August 01, 2022
    Released on J-STAGE: August 01, 2022
    Advance online publication: January 26, 2022
    JOURNAL RESTRICTED ACCESS

    This paper reports on the ambipolar conduction for the λ-Deoxyribonucleic Acid (DNA) field effect transistor (FET) with 450, 400 and 250 base pair experimentally and theoretically. It was found that the drain current of the p-type DNA/Si FET increased as the ratio of the guanine-cytosine (GC) pair increased and that of the n-type DNA/Si FET decreased as the ratio of the adenine-thymine (AT) pair decreased, and the ratio of the GC pair and AT pair was controlled by the total number of the base pair. In addition, it was found that the hole conduction mechanism of the 400 bp DNA/Si FET was polaron hopping and its activation energy was 0.13eV. By considering the electron affinity of the adenine, thymine, guanine, and cytosine, the ambipolar characteristics of the DNA/Si FET was understood. The holes are injected to the guanine base for the negative gate voltage, and the electrons are injected to the adenine, thymine, and cytosine for the positive gate voltage.

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  • Zian CHEN, Takashi OHSAWA
    Article type: PAPER
    Subject area: Integrated Electronics
    2022 Volume E105.C Issue 8 Pages 375-384
    Published: August 01, 2022
    Released on J-STAGE: August 01, 2022
    Advance online publication: January 31, 2022
    JOURNAL RESTRICTED ACCESS

    A new software based in-situ training (SBIST) method to achieve high accuracies is proposed for binarized neural networks inference accelerator chips in which measured offsets in sense amplifiers (activation binarizers) are transformed into biases in the training software. To expedite this individual training, the initial values for the weights are taken from results of a common forming training process which is conducted in advance by using the offset fluctuation distribution averaged over the fabrication line. SPICE simulation inference results for the accelerator predict that the accuracy recovers to higher than 90% even when the amplifier offset is as large as 40mV only after a few epochs of the individual training.

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  • Anna HIRAI, Yuichi MATSUMOTO, Takanori SATO, Tadashi KAWAI, Akira ENOK ...
    Article type: BRIEF PAPER
    Subject area: Lasers, Quantum Electronics
    2022 Volume E105.C Issue 8 Pages 385-388
    Published: August 01, 2022
    Released on J-STAGE: August 01, 2022
    Advance online publication: February 16, 2022
    JOURNAL RESTRICTED ACCESS

    A Mach-Zehnder optical modulator with the tunable multimode interference coupler was fabricated using Ti-diffused LiNbO3. The modulation extinction ratio could be voltage controlled to maximize up to 50 dB by tuning the coupler. Optical single-sideband modulation was also achieved with a sideband suppression ratio of more than 30 dB.

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